CGD Agrees Global Distribution Deal With High Service Leader, DigiKey By CIOTechOutlook Team

CGD Agrees Global Distribution Deal With High Service Leader, DigiKey

CIOTechOutlook Team | Wednesday, 21 June 2023, 03:09 IST

To enable more environmentally friendly electronics, Cambridge GaN Devices, a fabless, clean-tech semiconductor startup, has announced the formation of a distribution agreement with high-service market leader, DigiKey. In accordance with the conditions of the global agreement, DigiKey will maintain sizable inventories of the user-friendly, tough, and highly efficient ICeGaN HEMTs and related products from CGD.

ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD “This agreement is a significant step for CGD as we are scaling-up the business and building a GaN ecosystem that will help engineers explore and utilise the benefits of ICeGaN for high voltage power conversion. DigiKey is very well respected and a trusted brand, and we are sure that this deal will enable CGD to penetrate and support new markets worldwide.”

MISSY HALL | VICE-PRESIDENT, NEW MARKET DEVELOPMENT, DIGIKEY “We are pleased to add Cambridge GaN Devices to our Fulfilled by DigiKey program. By including CGD’s ICeGaN series transistors in our portfolio, DigiKey is delivering even more energy-efficient options for our customers to choose from. DigiKey is always looking to fill the gaps for our customer base, and the addition of CGD to our supplier community is one more gap filled and one more step towards great innovation.”

The 650 V H2 series ICeGaN gallium nitride HEMT family from CGD was just recently introduced. The new components simplify the design because they may be operated by industry gate drivers that are readily accessible in the marketplace. Compared to silicon components, ICeGaN HEMTs have an efficiency QG that is 10 times lower and a QOSS that is 5 times worse.

As a result, switching losses are significantly decreased, enabling industry-leading efficiency numbers that translate to decreases in system size, weight, and cost. By utilising CGD's smart gate interface, which essentially removes traditional e-mode GaN flaws, H2 Series ICeGaN HEMTs further solve reliability and ruggedness concerns.